8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 1

Business, Finance, Economics, Accounting, Operations Management, Computer Science, Electrical Engineering, Mechanical Engineering, Civil Engineering, Chemical Engineering, Algebra, Precalculus, Statistics and Probabilty, Advanced Math, Physics, Chemistry, Biology, Nursing, Psychology, Certifications, Tests, Prep, and more.
Post Reply
answerhappygod
Site Admin
Posts: 899603
Joined: Mon Aug 02, 2021 8:13 am

8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 1

Post by answerhappygod »

8 Based On Neaman Problem 4 55 Silicon At T 300k Is Doped With Acceptor Atoms At A Concentration Of Na 7 0 X 1 1
8 Based On Neaman Problem 4 55 Silicon At T 300k Is Doped With Acceptor Atoms At A Concentration Of Na 7 0 X 1 1 (20.44 KiB) Viewed 116 times
8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 10¹5 cm-3 (a) Determine EF - Ev. Answer: 0.19 eV (b) Calculate the concentration of additional acceptor atoms that must be added to move the Fermi level a distance kBT closer to the valence band edge. Answer: 1.20x10¹6 cm³
Join a community of subject matter experts. Register for FREE to view solutions, replies, and use search function. Request answer by replying!
Top
Post Reply

Return to “Archived Questions & Answers”