8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 1

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8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 1

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8 Based On Neaman Problem 4 55 Silicon At T 300k Is Doped With Acceptor Atoms At A Concentration Of Na 7 0 X 1 1
8 Based On Neaman Problem 4 55 Silicon At T 300k Is Doped With Acceptor Atoms At A Concentration Of Na 7 0 X 1 1 (20.44 KiB) Viewed 117 times
8.) (Based on Neaman, Problem 4.55) - Silicon at T = 300K is doped with acceptor atoms at a concentration of Na= 7.0 x 10¹5 cm-3 (a) Determine EF - Ev. Answer: 0.19 eV (b) Calculate the concentration of additional acceptor atoms that must be added to move the Fermi level a distance kBT closer to the valence band edge. Answer: 1.20x10¹6 cm³
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