- 4 An N Type Wafer With A Bulk Concentration Of 4 251 X 1015 Cm Was Diffused With Indium With A Surface Concentration O 1 (106.74 KiB) Viewed 16 times
4. An N-type wafer with a bulk concentration of 4.251 X 1015/cm³ was diffused with Indium with a surface concentration o
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4. An N-type wafer with a bulk concentration of 4.251 X 1015/cm³ was diffused with Indium with a surface concentration o
4. An N-type wafer with a bulk concentration of 4.251 X 1015/cm³ was diffused with Indium with a surface concentration of 6.5 X 1018/cm³, and resulted to a junction depth of 5μm. A) How long (in hours) did the diffusion take if the diffusion temperature was 1373°K? (6 pts) Do 10.5 cm²/s EA = 3.69 ev B) The Indium diffusion process of (A) is followed by a drive-in process for 15 hours, at the same temperature. Find the junction depth (in um), after the drive-in process. (6 pts)