- 3 An Abrupt N P Silicon Junction Has Dopant Concentrations Of Nd 2 X 1019 Cm Donors And Na 1 X 10 Cm Acceptors Th 1 (68.62 KiB) Viewed 16 times
3. An abrupt n -p silicon junction has dopant concentrations of ND = 2 x 1019 cm donors and NA = 1 x 10 cm acceptors. Th
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3. An abrupt n -p silicon junction has dopant concentrations of ND = 2 x 1019 cm donors and NA = 1 x 10 cm acceptors. Th
3. An abrupt n -p silicon junction has dopant concentrations of ND = 2 x 1019 cm donors and NA = 1 x 10 cm acceptors. The minority carrier lifetime of holes is tp=2 us in the n" region and for electrons tn= 1 ms in the p-region. Calculate the saturation current for an area of 12 um 12 um at a temperature of 105°C. Note that the electron and hole mobilities are 1350 cm?/V-s and 500 cm-/V-s, respectively at 105°C.
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