(a) Voltage is applied to both ends of the N-type semiconductor rod. At this time, the magnitude of the electric field is low enough not to reach the saturation rate of electrons. Mobility is simultaneously affected by impurities scattering affected by temperature and impurity concentration and lattice scattering, which is mainly affected by temperature. As the environment changes, the temperature increases by 10 times, the doping concentration of this rod increases by 1000 times, and how does the current density change when the voltage applied at both ends is reduced to 1/2?
Unlike the situation (a) , this time, the voltage applied to both ends of the n-type semiconductor rod is greater than the level at which the drift speed of electrons reaches the saturation speed. Mobility is simultaneously affected by impurities scattering affected by temperature and impurity concentration and lattice scattering, which is mainly affected by temperature. In this situation, if the temperature remains the same and the doping concentration is reduced by 1/2 and the voltage applied at both ends is doubled, what will happen to the change in current? I need an explanation as to why that happens.
(a) Voltage is applied to both ends of the N-type semiconductor rod. At this time, the magnitude of the electric field i
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(a) Voltage is applied to both ends of the N-type semiconductor rod. At this time, the magnitude of the electric field i
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