- Q 1 6x10 19c Kbt Q 26mv In 1350cm V S Mp 480cm V S N 1x1010 Cm3 T 300k We Have An N Type Silicon Bar Who 1 (37.79 KiB) Viewed 27 times
q=1.6x10-19C, KBT/q= 26mV, In=1350cm²/(V.s), Mp=480cm²/(V.s), n;=1x1010/cm3 (@T=300K) We have an n-type silicon bar, who
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q=1.6x10-19C, KBT/q= 26mV, In=1350cm²/(V.s), Mp=480cm²/(V.s), n;=1x1010/cm3 (@T=300K) We have an n-type silicon bar, who
q=1.6x10-19C, KBT/q= 26mV, In=1350cm²/(V.s), Mp=480cm²/(V.s), n;=1x1010/cm3 (@T=300K) We have an n-type silicon bar, whose cross section is 100umx10um. The length of the bar (in x-direction) is very long. When the hole concentration in the bar is given as p.,(x)= 10''[/cmº]exp(-x/10[um]), calculate the hole diffusion current in the bar. (Hint: Use Einstein's relation.)
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