ECE 352 - Problem Set #7 - Due 4/29 by 11:59 pm Prob. 1. pn junction applied voltage A silicon diode is asymmetrically d

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Ece 352 Problem Set 7 Due 4 29 By 11 59 Pm Prob 1 Pn Junction Applied Voltage A Silicon Diode Is Asymmetrically D 1 (88.53 KiB) Viewed 31 times

ECE 352 - Problem Set #7 - Due 4/29 by 11:59 pm Prob. 1. pn junction applied voltage A silicon diode is asymmetrically doped at NA = 1019 cm-3 and Np = 1016 cm-3. Assume that the minority electron and hole lifetimes are in = Tp = 10-6 s. The mobility up = 400 cm</s. The lengths of the N and P regions are L = 500 um. Answer the following questions assuming room temperature and an “ideal diode”. = a. Compute Jo, the diode current density at a forward bias of VA = 0.5 V. b. Compute Jp, the diode current density at a forward bias of VA = 0.6 V. C. Compute Jp, the diode current density at a reverse bias of VA =-0.5 V. d. Compute Jp, the diode current density at a reverse bias of VA = -1.0 v.