Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?
Posted: Thu Jul 14, 2022 12:08 pm
a) If VT is less, channel form quickly for conductivity
b) VT can be reduced by reducing oxide layer thickness
c) VT is independent of ion implementation
d) VT can be reduced by reducing substrate doping
b) VT can be reduced by reducing oxide layer thickness
c) VT is independent of ion implementation
d) VT can be reduced by reducing substrate doping