Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?

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answerhappygod
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Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?

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a) If VT is less, channel form quickly for conductivity
b) VT can be reduced by reducing oxide layer thickness
c) VT is independent of ion implementation
d) VT can be reduced by reducing substrate doping
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