W When 3x1011 photons, each with a wavelength of 850 nm, are incident on a silicon photodiode on average 1.4 x 1011 elec

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W When 3x1011 photons, each with a wavelength of 850 nm, are incident on a silicon photodiode on average 1.4 x 1011 elec

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W When 3x1011 Photons Each With A Wavelength Of 850 Nm Are Incident On A Silicon Photodiode On Average 1 4 X 1011 Elec 1
W When 3x1011 Photons Each With A Wavelength Of 850 Nm Are Incident On A Silicon Photodiode On Average 1 4 X 1011 Elec 1 (100.71 KiB) Viewed 37 times
W When 3x1011 photons, each with a wavelength of 850 nm, are incident on a silicon photodiode on average 1.4 x 1011 electrons are collected at the terminal of the device. The photodiode has a capacitance of 9 pF and the incident optical power is 5 W. Determine: A. [6 points] The quantum efficiency and the mean photocurrent. B. [3 points] The RMS quantum shot noise current if the post-detection bandwidth is 20 MHz. C. [3 points] The minimum load resistance corresponding to a bandwidth of 20 MHz, as- suming Ttr D. [3 points] The RMS thermal noise current in the resistor of part at sub part C temperature of 25°. E. [3 points] The signal-to-noise ratio in dB, when the mean photo current is the signal cur- rent and the dark current is negligible 100 ps.
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