3 Calculate The Built In Potential Barrier Voltage Of A Junction In Which The P And N Regions Are Doped Equally With 5 1 (129.08 KiB) Viewed 18 times
3 Calculate The Built In Potential Barrier Voltage Of A Junction In Which The P And N Regions Are Doped Equally With 5 2 (105.66 KiB) Viewed 18 times
3. Calculate the built-in potential barrier voltage of a junction in which the p and n regions are doped equally with 5 x 1016 atoms/cm'. Also, find the zero biased junction capacitance, if the junction capacitance is 1 uF, when a 3 V reverse bias voltage is applied across the junction.
Note: k = 86 x 10-6 eV/K, Eg = 1.1 eV and B = 5.23 x 1015 cm 3 K-3/2 for silicon, ni = 1.5 x 1010/cm3 for silicon at 300 K, and Vr = 0.026 V at 300 K.
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