- Consider That A Forward Bias Of 0 5 V Is Applied To A Sip N Junction At 300 K With The Cross Sectional Area Of 10 Cm T 1 (31.22 KiB) Viewed 37 times
Consider that a forward bias of 0.5 V is applied to a Sip-n junction at 300 K with the cross-sectional area of 10-cm². The minority carrier density in the n- side of the junction Pro = 4.5*103 cm and ni = 1.0x100 cm. Assume the following diode parameters: D. = 25 cm/s De = 10 cm/s In tp = 10-65 x = 11.7 1. = 1350 cm/V.s Hp = 480 cm /V.s (i) Calculate the doping concentration in the n-side of the pt-n junction. (ii) Determine the current in the p+-n junction. (iii) Calculate the minority carrier density at the edge of the depletion region in the n-side. (iv) Determine the charge storage capacitance, Cs.