1. Consider a (100) silicon wafer having diameter of 300 mm and thickness of 775 μm. One side of the wafer is coated wit

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1. Consider a (100) silicon wafer having diameter of 300 mm and thickness of 775 μm. One side of the wafer is coated with 2 µm thick Al using PVD at 400 C. The wafer is then cooled down to room temperature 23 C. Assuming the Si substrate to be isotropic, find the following: a. the film stress, b. the stress in substrate at the substrate-film interface, and c. the curvature. 2. Is the film stress shown in (1) large enough to cause failure?