3- 1.5 μm SiO2 is being etched on top of a Si substrate. The etch rate of oxide is 0.5 μm/min. Etch selectivity of the o
Posted: Tue Jul 12, 2022 8:47 am
3- 1.5 μm SiO2 is being etched on top of a Si substrate.The etch rate of oxide is 0.5 μm/min. Etch selectivity of the oxidewith respect to Si is 20-to-1. If etching is done for 3.5 min, howmuch of the underlying Si is etched?