3- 1.5 μm SiO2 is being etched on top of a Si substrate. The etch rate of oxide is 0.5 μm/min. Etch selectivity of the o

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answerhappygod
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3- 1.5 μm SiO2 is being etched on top of a Si substrate. The etch rate of oxide is 0.5 μm/min. Etch selectivity of the o

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3- 1.5 μm SiO2 is being etched on top of a Si substrate.The etch rate of oxide is 0.5 μm/min. Etch selectivity of the oxidewith respect to Si is 20-to-1. If etching is done for 3.5 min, howmuch of the underlying Si is etched?
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