The region of a silicon device that is at room temperature (T = 300 K) is doped with 1015 cm-3 acceptor atoms. A stream

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answerhappygod
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The region of a silicon device that is at room temperature (T = 300 K) is doped with 1015 cm-3 acceptor atoms. A stream

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The region of a silicon device that is at room temperature (T = 300 K) is doped with 1015 cm-3 acceptor atoms. A stream of minority carriers is injected at x = 0 and the distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 1011 cm-3 at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks)
Sketch the region. Determine the diffusion current density of electrons.
kindly sketch the region, i need to know the region please.
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