1.10.3 Section 1.4: Advanced MOS Modelling and Section 1.5: SPICE Modelling Parameters 1.24 If transistor drain current

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1 10 3 Section 1 4 Advanced Mos Modelling And Section 1 5 Spice Modelling Parameters 1 24 If Transistor Drain Current 1 (139 KiB) Viewed 46 times

1.10.3 Section 1.4: Advanced MOS Modelling and Section 1.5: SPICE Modelling Parameters 1.24 If transistor drain current is plotted versus gate-source voltage on a log-log scale, what is the slope of the curve in strong inversion? What is the slope for very large values of VGS? What is the slope of the curve at Veff = 1/0? 1.25 Make a qualitative sketch of transistor intrinsic gain, A₁, versus Veff for: a. constant device width, W b. constant drain current, lp In each case, what is the relationship between A₁ and Veft in weak-inversion, active mode, and under mobility degradation? 1.26 Derive expressions for transistor f, in terms of fundamental device constants and operating point while oper- ating in subthreshold and under mobility degradation. How do these compare with the expressions for strong inversion? 1.27 Using the Spice models from the text web site, perform simulations to extract approximate values for all of the transistor parameters listed in Table 1.5. Compare your results to the values in the table. 0 1.28 Two transistors with the same device paramters are biased with the same terminal voltages and have the same gate length L. a. One of the transistors has a drain current p = 0.2 mA and a width of W = 3 µm. Find the width of the other transistor so that it has a transconductance lp = 2 mA. b. One of the transistors has a transconductance gm = 0.4 mA/V and a width of W = 2 μm. Find the width of the other transistor so that it has a transconductance gm = 2 mA/V. and a width of W = 30 μm. Find the width of the other c. One of the transistors has a small-signal rds = 1 k transistor so that it has a small-signal da = 10 kQ2.