1a)An abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in

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1a)An abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V. (20 marks)
1b) The region of a silicon device that is at room temperature (T = 300 K) is doped with 1015 cm-3 acceptor atoms. A stream of minority carriers is injected at x = 0 and the distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 1011 cm-3 at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks)
i) Sketch the region. ii) Determine the diffusion current density of electrons.