-A silicon diode is fabricated by starting with an n-type substrate (N = 10¹6 cm³), into which indium is diffused to for

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-A silicon diode is fabricated by starting with an n-type substrate (N = 10¹6 cm³), into which indium is diffused to for

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A Silicon Diode Is Fabricated By Starting With An N Type Substrate N 10 6 Cm Into Which Indium Is Diffused To For 1
A Silicon Diode Is Fabricated By Starting With An N Type Substrate N 10 6 Cm Into Which Indium Is Diffused To For 1 (203.83 KiB) Viewed 44 times
-A silicon diode is fabricated by starting with an n-type substrate (N = 10¹6 cm³), into which indium is diffused to form as a p-type region doped at 10¹8 cm³. Assuming that an abrupt pt in junction is formed by the diffusion process. (20 marks) a. Calculate the Fermi level position in the p and n regions Determine the built in potential b. Calculate the depletion widths on the p and n side.
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