- The Region Of A Silicon Device That Is At Room Temperature T 300 K Is Doped With 10 5 Cm Acceptor Atoms A Stream Of 1 (187.21 KiB) Viewed 43 times
The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm³ acceptor atoms. A stream of
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The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm³ acceptor atoms. A stream of
The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm³ acceptor atoms. A stream of minority carriers is injected at x = 0 and the distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 10¹¹ cm³ at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks) Sketch the region. b. Determine the diffusion current density of electrons.