ASSIGNMENT No. 9 Q1. a. Detail the physical process of fabricating an p*-n-p bipolar junction transistor clearly explain

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Assignment No 9 Q1 A Detail The Physical Process Of Fabricating An P N P Bipolar Junction Transistor Clearly Explain 1 (51.6 KiB) Viewed 59 times

ASSIGNMENT No. 9 Q1. a. Detail the physical process of fabricating an p*-n-p bipolar junction transistor clearly explaining the significance of each region in the transistor action. b. By use of a suitable diagram, detail current components in a common base nº-p- n BJT and hence derive expressions for i. ii. iii. iv. terminal currents current gain emitter efficiency base transport factor c. Distinguish the modes of operation of an n-p- n bipolar junction transistor (BJT). Clearly give expressions for the boundary conditions at the junctions and show the density of minority carriers in each region. Q2. a. Differentiate between common base and common emitter configurations of a bipolar junction transistor. (Describe the physical configuration and give advantages of each configuration if any). b. Explain the terms emitter efficiency and base transport factor and relate them to the current gain in a common emitter n* -p-n transistor. c. A common emitter n* -p-n transistor has emitter efficiency of 0.995 and a base transport factor of 0.985 at a collector current of 2mA. Minority carriers crossing the base occupy an effective volume of 10-¹3 m³ and have a base transit mean time of 1ns. Find: i. ii. The number density of minority carriers Recombination time in the base