2. (20) An infinity uniformly doped n-type silicon bar is maintained at room temperature under steady state conditions s

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2 20 An Infinity Uniformly Doped N Type Silicon Bar Is Maintained At Room Temperature Under Steady State Conditions S 1 (101.37 KiB) Viewed 35 times

2. (20) An infinity uniformly doped n-type silicon bar is maintained at room temperature under steady state conditions such that Ap(0)= 10¹0%/cm³. N₂ = 10¹5/cm³, Apno <<< nno. Assume Hp Light 0 2) Calculate p(0) Silicon X 1) Calculate pno, the equilibrium hole concentration DO NOT DISTRI 4) What are the boundary conditions to be employed in solving for Apn(x)?