1. Consider a (100) silicon wafer having diameter of 300 mm and thickness of 775 m. One side of the wafer is coated wit

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1. Consider a (100) silicon wafer having diameter of 300 mm andthickness of 775 m. Oneside of the wafer is coated with 2 m thick Al using PVD at 400 C.The wafer is then cooleddown to room temperature 23 C. Assuming the Si substrate to beisotropic, find thefollowing:a. the film stress,b. the stress in the substrate at the substrate-film interface,andc. the curvature.
2. Is the film stress shown in (1) large enough to causefailure?
3. Sometimes, the peeling of thin films is observed at the edgesupon cooling down from processtemperature to room temperature. Why?Note: Find Si and PVD deposited Al properties from literature.