An abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in po

Business, Finance, Economics, Accounting, Operations Management, Computer Science, Electrical Engineering, Mechanical Engineering, Civil Engineering, Chemical Engineering, Algebra, Precalculus, Statistics and Probabilty, Advanced Math, Physics, Chemistry, Biology, Nursing, Psychology, Certifications, Tests, Prep, and more.
Post Reply
answerhappygod
Site Admin
Posts: 899603
Joined: Mon Aug 02, 2021 8:13 am

An abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in po

Post by answerhappygod »

An abrupt Si PN junction at 300 K is characterized by ND =1016 cm-3 and NA =2.5 x 1015 cm-3. Calculate the built inpotential, maximum electric field and depletion region width.Repeat the calculation with an applied reverse bias voltage of 1V
Join a community of subject matter experts. Register for FREE to view solutions, replies, and use search function. Request answer by replying!
Top
Post Reply

Return to “Archived Questions & Answers”