A silicon diode is fabricated by starting with an n-type substrate (Nd = 1016 cm-3), into which indium is diffused to fo

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A silicon diode is fabricated by starting with an n-type substrate (Nd = 1016 cm-3), into which indium is diffused to fo

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A silicon diode is fabricated by starting with an n-typesubstrate (Nd = 1016 cm-3), intowhich indium is diffused to form as a p-type region doped at1018 cm-3. Assuming that an abrupt p+-n junction is formed by the diffusion process.Calculate the Fermi level position in the p and n regionsDetermine the built in potentialCalculate the depletion widths on the p and n side
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