11.) (Neamen: Problem 7.18) An ideal one sided silicon n'p junction has Na 50N- The built-in potential barrier is 0.752V

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11 Neamen Problem 7 18 An Ideal One Sided Silicon N P Junction Has Na 50n The Built In Potential Barrier Is 0 752v 1 (25.03 KiB) Viewed 12 times

11.) (Neamen: Problem 7.18) An ideal one sided silicon n'p junction has Na 50N- The built-in potential barrier is 0.752V. The maximum electric field in the function is Emax = 1.14 x 105 V/cm when the reverse bias voltage is 10V. The junction is at room temperature, T = 300K. Determine (a) Na and Na Answer: Na = 4.05 x 10¹5 cm3, N₁ = 2.02 x 10¹7 cm 3. (b) , assuming a 10V reverse-bias voltage Answer: 1.81 x 10 cm. (c) C' (the capacitance per area) for a 10V reverse bias. Give your answer in units of F/cm². Answer: 5.6 x 10-F/cm²