Calculate the location of E in silicon at liquid nitrogen temperature (77 K), at room temperature (300 K), and at 100°C
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Calculate the location of E in silicon at liquid nitrogen temperature (77 K), at room temperature (300 K), and at 100°C
- Ei has to decrease as T increases
Thank you
Calculate the location of E in silicon at liquid nitrogen temperature (77 K), at room temperature (300 K), and at 100°C (let m = 1.0 m, and m = 0.19 m). Is it reasonable to assume that E is in the center of the forbidden gap?