(a) A bar of intrinsic Si is doped from one end such that N₁(x) = N₂e-x/² at 300 K. Assume that No = 10¹5 cm³, Tp 10¹5 c

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A A Bar Of Intrinsic Si Is Doped From One End Such That N X N E X At 300 K Assume That No 10 5 Cm Tp 10 5 C 1 (49.1 KiB) Viewed 27 times

(a) A bar of intrinsic Si is doped from one end such that N₁(x) = N₂e-x/² at 300 K. Assume that No = 10¹5 cm³, Tp 10¹5 cm³³, Tp = 150 ns and μp = 300 cm²/Vs. Find the drift and diffusion hole current at x = 20 µm if E = 10³ V/cm and λ = 60 µm. (b) A Si sample is doped with 5 x 10¹5 cm³ acceptor atoms at 300 K. Carriers are injected into the sample at z = 0 with concentration An(z = 0) = 10¹3 cm 3. Draw the steady state energy band diagram of the semiconductor at z = 20 μm if Ln 100 μm. =