A Si p*n junction has a donor doping of 5 x 1016 cm-³ on the n side and a cross- sectional area of 10-3 cm². If the hole

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A Si p*n junction has a donor doping of 5 x 1016 cm-³ on the n side and a cross- sectional area of 10-3 cm². If the hole

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A Si P N Junction Has A Donor Doping Of 5 X 1016 Cm On The N Side And A Cross Sectional Area Of 10 3 Cm If The Hole 1
A Si P N Junction Has A Donor Doping Of 5 X 1016 Cm On The N Side And A Cross Sectional Area Of 10 3 Cm If The Hole 1 (31.8 KiB) Viewed 40 times
A Si p*n junction has a donor doping of 5 x 1016 cm-³ on the n side and a cross- sectional area of 10-3 cm². If the hole recombination time (Tp) is 1 us and the hole diffusion coefficient (Dp) is 10 cm²/s, calculate the current with a forward bias of 0.5 V at 300 K. Take the intrinsic concentration as 1.5 x 1010 cm-³.
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