What is the built-in potential at room temperature for a p*-n junction of GaAs that is heavily doped on the p-type side

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What is the built-in potential at room temperature for a p*-n junction of GaAs that is heavily doped on the p-type side

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What Is The Built In Potential At Room Temperature For A P N Junction Of Gaas That Is Heavily Doped On The P Type Side 1
What Is The Built In Potential At Room Temperature For A P N Junction Of Gaas That Is Heavily Doped On The P Type Side 1 (9.97 KiB) Viewed 16 times
What is the built-in potential at room temperature for a p*-n junction of GaAs that is heavily doped on the p-type side and has a doping level of Nd=(7.100x10^16) (cm³) on the n-type side? You can assume all dopant atoms are ionized at room temperature. Use values from Table 3.1 in your textbook and give your answer in volts to 4 significant digits.
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