the trend in magnitude for each quantity. 23. Using the characteristics of Fig. 3.13a, determine Bac at IB = 25 μA and V
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the trend in magnitude for each quantity. 23. Using the characteristics of Fig. 3.13a, determine Bac at IB = 25 μA and V
the trend in magnitude for each quantity. 23. Using the characteristics of Fig. 3.13a, determine Bac at IB = 25 μA and VCE = 10 V. Then calculate adc and the resulting level of IE. (Use the level of Ic determined by Ic = BaclB-) 24. a. Given that q = 0.980. determine the corresponding value of B..
Mc (mA) 7 (Saturation region) 5 3 1 INCER 190 Μ.Α. 80 Μ.Α. 70 μA 60 μA 50 μA (Active region) 10 40 μA 30 MA 20 μA ICEO BICHO 10 μA In = 0 MA 15 (Cutoff region) 20 VCE (V) FIG. 3.13 Characteristics of a silicon transistor in the common-emitter configuration: (a) colle