- A Metal Silicon Junction Is Formed Using A Metal With A Workfunction Of 4 3 Ev The Silicon Is Doped N Type To A Carri 1 (68.07 KiB) Viewed 49 times
A metal-silicon junction is formed using a metal with a workfunction of 4.3 (eV). The silicon is doped n-type to a carri
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A metal-silicon junction is formed using a metal with a workfunction of 4.3 (eV). The silicon is doped n-type to a carri
A metal-silicon junction is formed using a metal with a workfunction of 4.3 (eV). The silicon is doped n-type to a carrier concentration of 10¹7 (cm³). The electron affinity of silicon is 4.0 (eV), and the intrinsic carrier concentration in silicon is 1.5 × 10¹0⁰ (cm³). The temperature is 300 (K). The bandgap for silicon is 1.11 (eV) and the permittivity of silicon is €€ = 11.8. €0. a) What is the barrier height for this junction? (6 points) b) Far from the junction, where is the Fermi level in the silicon located? (6 points) c) What is the value of the built-in potential, Vo? (6 points) d) What is the value of the equilibrium depletion width for this junction? (7 points)