Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side Nd = 5×10^1

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Design an ideal abrupt silicon PN-junction at 300 K such that the
donor impurity concentration in the n-side Nd = 5×10^15/cm3 and the
acceptor impurity concentration in the p-side Na = 250 ×10^15/cm3.
Use the diode parameters: diode area = 2×10^−3 cm2, ni = 10^10/cm3,
Dn =25 cm2/s, Dp =10 cm2/s, τn =τp = 5×10^−7s, εr=11.8, μn= 1350
cm2/V.s, μp= 450 cm2/V.s
Determine the following when a forward bias of 0.6 V is applied
to the diode:
1. The contact potential Vc (in V).
2. The values (in μm) of the depletion width at the p-side xp and
the depletion width at the n-side xn.
3. The electric field (V/cm) at a distance of 0.2 × xn away from
the metallurgical junction in the n-side.
4. Minority carrier hole diffusion current in mA at the n-side
depletion edge Ip (xn)
5. Minority carrier electron diffusion current in mA at the p-side
depletion edge In (−xp)
6. The total diode current I in mA.
7. The junction capacitance Cj in F
8.Roughly, sketch the carrier distribution across the junction
under forward bias. Label clearly.
9. Calculate and prove that the magnitude of electric field far
away from the depletion region is small compared to that in the
space charge region.
10. For the same forward bias of 0.6 V, an application requires
higher diode current than that calculated in Part 6. If you have a
choice to change the dopant concentration in one side of the
junction (either p-side or n-side) to achieve this higher current,
state whether you will increase or decrease the dopant
concentration in the chosen side? Briefly explain your
answer.
11. If the PN-junction diode is made of GaAs semiconductor instead
of Silicon, do you expect the total diode current I to remain the
same, decrease or increase for the same forward bias of 0.6 V?
Explain briefly without doing any calculation.