17. Calculate the common base current gain, a. Errors within 0.001 will be considered correct. 0.9716 Incorrect 18. Calc
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17. Calculate the common base current gain, a. Errors within 0.001 will be considered correct. 0.9716 Incorrect 18. Calc
11. Use this information to answer Questions 11-18: Consider a uniformly doped silicon npn bipolar junction transistor with the following parameters. 3 Doping density: NDE = 5 x 1017 cm 3. NAB = 1 x 1016 cm3, NDC = 1 x 1015 cm-3 , = Diffusion coefficient: Dpe = 8 cm/s, DnB = 15 cm? /s, Dpc = 12 cm/s A Carrier Lifetime: TpE S, TnB = 5 x 10-8 s, TPO 10-8 = = 10-75 Quasi-neutral base region width:2B = 0.7 um XB = The emitter region is infinitely long and the bias voltages are given as VBE = 0.6 V and VCE = 5.0 V. Calculate the electron current density in the collector, Jnc. Give your answer in unit of A/cm². Answers within 5% error will be considered correct.
12. Calculate the hole current density in the emitter, JpE. Give your answer in unit of A/cm? Answers within 5% error will be considered correct. 7,0111 Incorrect 13. Calculate the recombination current density in the base, JR. Give your answer in unit of A/cm2. Answers within 5% error will be considered correct. 8.67585