- 1 An Abrupt Si Pn Junction Diode At Room Temperature Has Dopant Concentration Of N 7 X 104 Cm And Ns 1 X 1016 Cm I 1 (35.45 KiB) Viewed 45 times
1. An abrupt Si pn junction diode at room temperature has dopant concentration of N = 7 x 104 cm and Ns = 1 x 1016 cm? I
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1. An abrupt Si pn junction diode at room temperature has dopant concentration of N = 7 x 104 cm and Ns = 1 x 1016 cm? I
1. An abrupt Si pn junction diode at room temperature has dopant concentration of N = 7 x 104 cm and Ns = 1 x 1016 cm? Initially, no bias is applied to this pnt junction. a. Sketch the energy band diagram of the pn junction and determine the built-in potential. (5 marks] b. A forward-bias diode current density, J= 80 mA/cm is required from the diode. Identify the appropriate forward-bias. You may assume that to = Tpo = 0.1 x 10-6 s, Dn = 25 cm/s, and Do = 10 cm/s. [5 marks]
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