(k) Assuming a hole carrier density of states of the form 1 2mn Dp (E) * F.B}} (E, – 272 ħ2 and by first making an appro

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K Assuming A Hole Carrier Density Of States Of The Form 1 2mn Dp E F B E 272 H2 And By First Making An Appro 1 (35.85 KiB) Viewed 79 times

(k) Assuming a hole carrier density of states of the form 1 2mn Dp (E) * F.B}} (E, – 272 ħ2 and by first making an appropriate approximation of the Fermi-Dirac distribution, derive an expression for the hole concentration p as a function of the temperature and the Fermi level. Explain your answer on physical grounds. The symbols take their usual meanings. [3 marks] (1) State one definition, with the aid of its equation, of the effective masses of electrons and holes in terms of the features of a band-structure, and explain its meaning. Define precisely the distinction between a direct gap semiconductor and an indirect gap semiconductor. [1 mark]