- P Semiconductors Find The Temperature Dependences Of The Chemical Potential And Hole Con Centration Of P Semiconductors 1 (15.71 KiB) Viewed 29 times
Hy = p= NA, T <T<T, Ny = koT In NA NY Nc Hv = } Eg + } kipT in p= VNEN, e–Bs/2k8T, -EsT > T2, EA Eg kBT kpT2 = N In 19A WA In 4NN, 49А 3 A silicon specimen is doped with boron (EA = 45.6 meV, NA = 1015 cm-3). Present graphically its Hy = Hv(T) and p = p(T) dependences. Answer: fig. 4. = =
10 10% 10% p (cm) 10" p-Si: B 10 102 1.2 Ес 1.0 0.8 p-Si: B 4 eV) 0.6 0.4 0.2 0.0 10 1000 100 T (K) Figure 4: Temperature dependences of the hole concentration and chemical po- tential for p-silicon (NA = 105 cm-, A = 45.6 mev; the temperature dependence of the energy gap Eg(T) = Eg(0) - a T°/(T + 3), Eg(0) = 1.17 eV, a = 4.73. 10-4 ev /K, B = 636 K is taken into account) .