a. Thin-films of Al conducting stripes are brought into intimate contact with insulating layers of SiO2 in integrated ci

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a. Thin-films of Al conducting stripes are brought into intimate contact with insulating layers of SiO2 in integrated ci

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A Thin Films Of Al Conducting Stripes Are Brought Into Intimate Contact With Insulating Layers Of Sio2 In Integrated Ci 1
A Thin Films Of Al Conducting Stripes Are Brought Into Intimate Contact With Insulating Layers Of Sio2 In Integrated Ci 1 (25.31 KiB) Viewed 63 times
a. Thin-films of Al conducting stripes are brought into intimate contact with insulating layers of SiO2 in integrated circuits. Calculate AG, for the reaction involving Al and SiO2 from the following equations and find if there is a thermodynamic tendency for them to react at 400°C? (4+1) Si + 02 → SiO2 AG.(400 °C) = -178 kcal 4 2 (C 3 3 - A1 + 02 - A1203 AG, (400 °C) = -235 kcal =
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