Q7) The fan-out of the device when connected to identical devices when the output of the driver is LOW is given that I 0

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Q7 The Fan Out Of The Device When Connected To Identical Devices When The Output Of The Driver Is Low Is Given That I 0 1 (54.44 KiB) Viewed 52 times

Q7) The fan-out of the device when connected to identical devices when the output of the driver is LOW is given that I 0.02 mA I-0.03 mA, II = 110 WA. a) 30 b) 25 c) 20 d) None of them For the following CMOS SRAM memory cell, assume the cell is ready to Read operation and assume it stores 1(e: Q=1, 0:0) answer questions 8 - 11, Ward (W Q8) When word linc (W) =High Vio c) Access transistors (Q5 & Q6) are on and the cell 0: is connected to B and B'. b) Access transistors (Q5 & Q6) are off and the cell is isolated from Band B'. c) Access transistors (Q5 & Q6) are on and the cell is connected to word line Wand isolated form Band B' d) The cell is not selected Q9) Band B behaves like: a) Input lines send data to cell b) output lines: send data from cell to sense amplifier c) Botha &b d) None Q10) Capacitors connected to B&B: a) Capacitor B is discharged b) Capacitor B is charged c) Capacitor B is charged d) Capacitor B is discharged Q11) The condition on the voltage at when rising & not to change the state of the flip-flop during the read process is a) O SVO S Vos b) vo Vra c) O SVO SVR d) O SVO SVO For the following memory cell answer questions 12 - 15 Q12) Which statement/s is/are correct according to ane-transistor DRAM cell: a) When the cell is storing a 0the capacitor is charged to Voo b) When the cell is storing a 1, the capacitoris discharged to 0. c) When the cell is storing a 1, the capacitor is charged to Vo. d) All of them HH Q13) Suppose that word line (W)=1, bit line (B)-Vo, C+0. This situation means a operation a) Read b) Write c) Both Read and Write d) All of them Q14) The main disadvantage of this memory cell is the Problem a) Saturation b) Charging c) Discharging d) Leakage Effect