4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentr

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4 Based On Neaman Problem 4 9 Consider Silicon At T 300k A Calculate The Thermal Equilibrium Electron Concentr 1 (23.88 KiB) Viewed 146 times

4 Based On Neaman Problem 4 9 Consider Silicon At T 300k A Calculate The Thermal Equilibrium Electron Concentr 2 (23.75 KiB) Viewed 146 times

4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec- Ep 0.2 eV - Answer: 1.28 x 10¹6 cm-3 ii. Ec- Ep 0.3 eV - Answer: 2.74 x 10¹4 cm-3 iii. Ec-Er-0.4 eV 4 Answer: 5.84 x 10¹2 cm-3 (b) Calculate the thermal equilibrium hole concentration for: i. Er-Ey-0.2 eV Answer: 4.78 x 10¹5 cm-3
ii. Ep-Ev0.3 eV Answer: 1.02 x 10¹4 cm-3 iii. Ep-Ey-0.4 eV Answer: 2.18 x 10¹2 cm-3 5.) (Based on Neaman 4.21) - Assuming Silicon at a temperature is 300 K and: (a) The equilibrium electron concentration is 1.5 x 10¹6 cm3, determine Ec- Ep. Answer: 0.196 eV (b) The equilibrium hole concentration is 5.0 x 10¹5 cm3, determine Ep - Ev. Answer: 0.199 eV 4 (c) Repeat part (a) for gallium arsenide Answer: 0.087 eV (d) Repeat part (b) for gallium arsenide Answer: 0.193 eV