Consider an n-p-n Si-BJT at 300 °K with the following parameters: Emitter doping N₂ = 10¹8 cm-³, Base doping N₂ 10¹7 cm-

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Consider An N P N Si Bjt At 300 K With The Following Parameters Emitter Doping N 10 8 Cm Base Doping N 10 7 Cm 1 (218.26 KiB) Viewed 27 times

Consider an n-p-n Si-BJT at 300 °K with the following parameters: Emitter doping N₂ = 10¹8 cm-³, Base doping N₂ 10¹7 cm-³, Collector doping Nc = 10¹6 cm-3 Base width: XB = 0.5 μm, Base Diffusion coefficient D = 20 cm² Emitter Diffusion coefficient De = 10 S Hole diffusion length Lp = 15 μm, b Electron diffusion length: Line = 5 μm The lifetime for carriers in the EBJ depletion region is 10-8 s. 1. Draw the energy band diagram when the Emitter Base Junction is forward biased at 0.6 V and the Base Collector Junction is reverse biased at 5.0 V, showing Fermi levels and potential barrier heights (8 points) 2. Calculate the emitter injection efficiency (y) and current gain (B) of the BJT under the above conditions. (5 points) 3. Find IE, IC, and IB (7 points) 4. If the base width is reduced by a factor of two (2), how will this affect (5 points) a. Current gain (B). b. Base transport factor (a). cm²