5. There is a dynamic random access memory (DRAM). (1) What is the minimum capacitance of Cs to have higher than 3V of V

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5 There Is A Dynamic Random Access Memory Dram 1 What Is The Minimum Capacitance Of Cs To Have Higher Than 3v Of V 1 (26.46 KiB) Viewed 65 times

5. There is a dynamic random access memory (DRAM). (1) What is the minimum capacitance of Cs to have higher than 3V of Vi after READ operation? Assume Vs = 3.3V, Cbit is 1fF. (2) DRAM requires refresh process because leakage makes the voltage at Cs decrease. What is the minimum refresh period to sustain the voltage Vs higher than 3.0V? Assume the leakage current is 1 nA, and Cs is 20 fF. Ignore voltage decrease by charge sharing. WL = 1 + ctiv Cs Vs → Vf Chit + Vbit → Vf