= 2 mS, RE = 100 are given. 2) For the amplifier below, 9m,npn = 20 mS, 9m,nmos = 10 mS, 9m,pmos 100 , R₁ = 2 kN, ro,npn

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2 Ms Re 100 Are Given 2 For The Amplifier Below 9m Npn 20 Ms 9m Nmos 10 Ms 9m Pmos 100 R 2 Kn Ro Npn 1 (133.14 KiB) Viewed 70 times

= 2 mS, RE = 100 are given. 2) For the amplifier below, 9m,npn = 20 mS, 9m,nmos = 10 mS, 9m,pmos 100 , R₁ = 2 kN, ro,npn = 60 kn, ro,nmos = 8k, ro,pmos = 12 kn, and p Assume that MOSFETs operate in the saturation region and the BJT is in the forward-active region, where VB1 through VB5 are DC biasing voltages. a. Find the mid-band voltage gain expression Ay = Vout/Vin of the amplifier, and calculate it in dB. b. How would you improve the CMRR of this amplifier? Suggest a modification in the circuit topology, and calculate (approximately) the factor of improvement of your proposal. Vcc I V cc V cc T3 -o + Vin T₂ T₁ Vb1 Ts o- T5 любал T8 Vb2T7 T6 T4 RE J T10 Vb4 VES THET 11 Vout RL