Q. 3 (a) Consider a long silicon pn junction photodiode with the parameters given below. The cross-sectional area is A =

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Q 3 A Consider A Long Silicon Pn Junction Photodiode With The Parameters Given Below The Cross Sectional Area Is A 1 (79.65 KiB) Viewed 74 times

Q. 3 (a) Consider a long silicon pn junction photodiode with the parameters given below. The cross-sectional area is A = 10-³ cm². Assume the photodiode reverse biased by a 5-volt battery in series with a 5-k load resistor. An optical signal at a wavelength of 1 µm is incident on the photodiode producing a uniform generation 1| Pa rate of excess carriers throughout the entire device. Determine the incident intensity such that the voltage across the load resistor is 0.5 V. Consider T = 300 K with the following parameters: N₁ = 10¹6 cm 3 Na 10¹6 cm-3 D₁ = 25 cm²/s D₂ = 10 cm²/s To = 5 x 10-7 s Tpo= 10-7 s