Consider a pn junction diode at 300 K in which the p doping density is 1024 m-3 while the n doping density is 1022 m-3.

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Consider a pn junction diode at
300 K in which the p doping density is 1024
m-3 while the n doping density is 1022
m-3. The thickness of the p-doped region is 10 μm while
the thickness of the n-doped region is 20 μm and the
cross-sectional area of the diode is 2 μm2. Take
kT=0.025 V, kT/q=0.025 eV, the intrinsic carrier
concentration ni to be 1.5x1016
m-3 at 300K, the diffusion constant for the electrons
De to be 0.0038 m2/s and the diffusion
constant for the holes Dh to be 0.0012
m2/s.
(4 marks)
(2 marks)
ii) Calculate the maximum electric
field strength and say where it is located.
(2 marks)