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Q4 Consider a pn junction diode at 300 K in which the p doping density is 1024 m3 while the n doping density is 1022 m³. The thickness of the p-doped region is 10 μm while the thickness of the n-doped region is 20 um and the cross-sectional area of the diode is 2 μm². Take kT-0.025 V, kT/q-0.025 eV, the intrinsic carrier concentration n, to be 1.5x1016 m²3³ at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s and the diffusion constant for the holes Dh to be 0.0012 m²/s. a) Describe in words the two approaches used to calculate the contact potential at equilibrium. (4 marks)