1. Find the resistivity at 300 K for a Si sample doped with 1.0x1014 cm 3 of phosphorous atoms, 8.5x 1012 cm of arsenic
Posted: Mon May 23, 2022 11:30 am
1. Find the resistivity at 300 K for a Si sample doped with 1.0x1014 cm 3 of phosphorous atoms, 8.5x 1012 cm of arsenic atoms and 1.12x1013cm3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are un = 1500 cm2 /s, Wp = 500 cm2 Ns, independent of impurity concentrations. Given that n = 9.65x109 cm 3 in Si at 300 K. =