1. Find the resistivity at 300 K for a Si sample doped with 1.0x1014 cm 3 of phosphorous atoms, 8.5x 1012 cm of arsenic

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1. Find the resistivity at 300 K for a Si sample doped with 1.0x1014 cm 3 of phosphorous atoms, 8.5x 1012 cm of arsenic

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1 Find The Resistivity At 300 K For A Si Sample Doped With 1 0x1014 Cm 3 Of Phosphorous Atoms 8 5x 1012 Cm Of Arsenic 1
1 Find The Resistivity At 300 K For A Si Sample Doped With 1 0x1014 Cm 3 Of Phosphorous Atoms 8 5x 1012 Cm Of Arsenic 1 (120.52 KiB) Viewed 26 times
1. Find the resistivity at 300 K for a Si sample doped with 1.0x1014 cm 3 of phosphorous atoms, 8.5x 1012 cm of arsenic atoms and 1.12x1013cm3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are un = 1500 cm2 /s, Wp = 500 cm2 Ns, independent of impurity concentrations. Given that n = 9.65x109 cm 3 in Si at 300 K. =
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