8) Determine the ideal saturation current density for a silicon pn junction diode at T = 300 K if the density of donor i

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8 Determine The Ideal Saturation Current Density For A Silicon Pn Junction Diode At T 300 K If The Density Of Donor I 1 (54.28 KiB) Viewed 12 times

8) Determine the ideal saturation current density for a silicon pn junction diode at T = 300 K if the density of donor impurities (Na) is equal to the density of acceptor impurities (i.e. 1016 cm), the minority carrier electron and minority carrier hole diffusion coefficients are 25 cm²/s and 10 cm-/s, respectively, the intrinsic concentration of electrons is (1.5 1010 cm²), and the excess minority carrier electron and hole lifetimes are both 5 x 10-7 s.