Assume a npn Silicon bipolar junction transistor at 300 K with the following parameters: -3 Nae cm 1018 Nab = 1017 cm-3

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Assume A Npn Silicon Bipolar Junction Transistor At 300 K With The Following Parameters 3 Nae Cm 1018 Nab 1017 Cm 3 1 (158.68 KiB) Viewed 32 times

Assume a npn Silicon bipolar junction transistor at 300 K with the following parameters: -3 Nae cm 1018 Nab = 1017 cm-3 -3 -3 Nac = 2 - = 2 = 5x 1016 cm3 Db = 30.0 cm's-1 Lb = 15.0 um De = 10.0 cm´s Le = 5.0 um (i) Calculate the maximum base width, Wb, that will allow a current gain ß of 100 when the EBJ is forward biased at 1.0 V and the BCJ is reverse biased at 5.0 V. (ii) Describe two advantages and two disadvantages of making the base smaller. = a